onsemi · Thyristors & Power Discretes · MPN HGTG12N60A4D
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| Pd - Power Dissipation | 167W |
|---|---|
| Td(off) | 96ns |
| Td(on) | 17ns |
| Current - Collector(Ic) | 54A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.6V@250uA |
| Gate Charge(Qg) | 78nC@15V |
| Vce Saturation(VCE(sat)) | 2.7V@12A,15V |
| Reverse Recovery Time(trr) | 30ns |
| Switching Energy(Eoff) | 50uJ |
| Turn-On Energy (Eon) | 55uJ |
IGBT 600V 54A 167W Through Hole TO-247