onsemi · Thyristors & Power Discretes · MPN HGTG11N120CND
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| Td(off) | 240ns |
|---|---|
| Pd - Power Dissipation | 298W |
| Td(on) | 26ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 43A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@90uA |
| Vce Saturation(VCE(sat)) | 2.4V@11A,15V |
| Reverse Recovery Time(trr) | 70ns |
| Switching Energy(Eoff) | 1.3mJ |
| Turn-On Energy (Eon) | 950uJ |
298W 43A 1.2kV NPT (Non-Punch Through) TO-247AC-3 Single IGBTs RoHS