onsemi · Thyristors & Power Discretes · MPN HGTD1N120BNS9A
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| Td(off) | 67ns |
|---|---|
| Pd - Power Dissipation | 60W |
| Td(on) | 15ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 5.3A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@50uA |
| Vce Saturation(VCE(sat)) | 2.9V@1.0A,15V |
| Gate Charge(Qg) | 14nC |
| Switching Energy(Eoff) | 90uJ |
IGBT NPT (Non-Punch Through) 1.2kV 5.3A 60W Surface Mount TO-252AA