onsemi · Thyristors & Power Discretes · MPN HGT1S20N36G3VLS
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| Td(off) | - |
|---|---|
| Pd - Power Dissipation | - |
| Td(on) | - |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 415V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 28.7nC |
| Turn-On Energy (Eon) | - |
415V TO-263AB Single IGBTs RoHS