onsemi · Thyristors & Power Discretes · MPN HGT1S12N60C3DS
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| Pd - Power Dissipation | 104W |
|---|---|
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 24A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 71nC |
| Reverse Recovery Time(trr) | 32ns |
| Turn-On Energy (Eon) | - |
104W 24A 600V TO-263AB Single IGBTs