onsemi · Thyristors & Power Discretes · MPN FMG2G75US60
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| Pd - Power Dissipation | 310W |
|---|---|
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 75A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 7.056nF@30V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
310W 75A 600V PM-7-GA Single IGBTs RoHS