onsemi · Thyristors & Power Discretes · MPN FMG2G75US120
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| Td(off) | - |
|---|---|
| Pd - Power Dissipation | - |
| Td(on) | - |
| Current - Collector(Ic) | 75A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | - |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Vce Saturation(VCE(sat)) | - |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | - |
75A 1.2kV PM-7-GA IGBT Modules RoHS