onsemi · Thyristors & Power Discretes · MPN FMG2G200US60
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| Pd - Power Dissipation | 695W |
|---|---|
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
695W 200A 600V PM-7-HA Single IGBTs RoHS