onsemi · Thyristors & Power Discretes · MPN FMG1G150US60H
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| Pd - Power Dissipation | 595W |
|---|---|
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+150℃@(Tj) |
595W 150A 600V IGBT Modules RoHS