onsemi · Thyristors & Power Discretes · MPN FGY75T120SWD
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| Td(off) | 171ns |
|---|---|
| Pd - Power Dissipation | 714W |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 42ns |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 29.6pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.6V@75mA |
| Vce Saturation(VCE(sat)) | 2V@75A,15V |
| Reverse Recovery Time(trr) | 204ns |
| Switching Energy(Eoff) | 2.32mJ |
714W 150A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS