onsemi FGY75T120SWD

onsemi · Thyristors & Power Discretes · MPN FGY75T120SWD

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Specifications

Td(off)171ns
Pd - Power Dissipation714W
Operating Temperature-55℃~+175℃
Td(on)42ns
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)29.6pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.6V@75mA
Vce Saturation(VCE(sat))2V@75A,15V
Reverse Recovery Time(trr)204ns
Switching Energy(Eoff)2.32mJ

Technical details

714W 150A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS

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