onsemi · Thyristors & Power Discretes · MPN FGY75T120SQDN
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| Td(off) | 332ns |
|---|---|
| Pd - Power Dissipation | 790W |
| Td(on) | 64ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 137pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@0.4mA |
| Vce Saturation(VCE(sat)) | 1.95V@75A,15V |
| Reverse Recovery Time(trr) | 99ns |
| Switching Energy(Eoff) | 1.96mJ |
790W 150A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS