onsemi · Thyristors & Power Discretes · MPN FGY4L100T120SWD
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| Pd - Power Dissipation | 1.071kW;536W |
|---|---|
| Td(off) | 272.4ns;232.4ns;324.8ns;276.8ns |
| Td(on) | 56ns;59.2ns;44.8ns;49.6ns |
| Operating Temperature | -55℃~+175℃ |
| Current - Collector(Ic) | 200A;100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 40.1pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.5V |
| Vce Saturation(VCE(sat)) | 1.7V |
| Reverse Recovery Time(trr) | 167.2ns;249.4ns;281.4ns;413.4ns |
| Switching Energy(Eoff) | 1.9mJ;3.5mJ;3.1mJ;5.1mJ |
1.2kV FS (Field Stop) TO-247-4L Single IGBTs RoHS