onsemi · Thyristors & Power Discretes · MPN FGY40T120SMD
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| Pd - Power Dissipation | 882W |
|---|---|
| Td(off) | 475ns |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 40ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 100pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.9V@40mA |
| Vce Saturation(VCE(sat)) | 2.4V@40A,15V |
| Reverse Recovery Time(trr) | 65ns |
| Switching Energy(Eoff) | 1.1mJ |
882W 80A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS