onsemi · Thyristors & Power Discretes · MPN FGY100T65SCDT
No reviews yet — be the first to review onsemi FGY100T65SCDT.
| Td(off) | 216ns |
|---|---|
| Pd - Power Dissipation | 750W |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 8ns |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.3V |
| Vce Saturation(VCE(sat)) | 1.5V |
| Reverse Recovery Time(trr) | 62ns |
| Collector Cut-Off Current (Ices) | 250uA |
| Switching Energy(Eoff) | 3.8mJ |
750W 200A 650V FS (Field Stop) TO-247-3 Single IGBTs RoHS