onsemi · Thyristors & Power Discretes · MPN FGY100T120SWD
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| Td(off) | 168ns |
|---|---|
| Pd - Power Dissipation | 866W |
| Td(on) | 46.4ns |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 41.4pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.6V@100mA |
| Vce Saturation(VCE(sat)) | 2V@100A,15V |
| Reverse Recovery Time(trr) | 152ns |
| Switching Energy(Eoff) | 1.6mJ |
| Turn-On Energy (Eon) | 3.1mJ |
866W 200A 1.2kV FS (Field Stop) TO-247-3LD Single IGBTs RoHS