onsemi · Thyristors & Power Discretes · MPN FGY100T120RWD
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| Pd - Power Dissipation | 1.071kW |
|---|---|
| Td(off) | 364ns |
| Td(on) | 80ns |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 44.2pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.9V@100mA |
| Vce Saturation(VCE(sat)) | 1.75V@100A,15V |
| Reverse Recovery Time(trr) | 256ns |
| Switching Energy(Eoff) | 7.05mJ |
| Turn-On Energy (Eon) | 8.13mJ |
1.071kW 200A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS