onsemi FGPF50N33BTTU

onsemi · Thyristors & Power Discretes · MPN FGPF50N33BTTU

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Specifications

Pd - Power Dissipation-
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)330V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.5V@15V,20A
Gate Charge(Qg)35nC
Turn-On Energy (Eon)-

Technical details

50A 330V TO-220F Single IGBTs RoHS

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