onsemi · Thyristors & Power Discretes · MPN FGPF4565
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| Td(off) | 40.8ns |
|---|---|
| Pd - Power Dissipation | 30W |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 11.2ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 40.3nC |
30W 650V FS (Field Stop) TO-220F-3 Single IGBTs RoHS