onsemi FGPF4533

onsemi · Thyristors & Power Discretes · MPN FGPF4533

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Specifications

Pd - Power Dissipation28.4W
Collector-Emitter Breakdown Voltage (Vces)330V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.8V@15V,50A
Gate Charge(Qg)44nC
Turn-On Energy (Eon)-

Technical details

28.4W 330V TO-220F Single IGBTs RoHS

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