onsemi · Thyristors & Power Discretes · MPN FGP3440G2-F085
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| Td(off) | 5.3us |
|---|---|
| Pd - Power Dissipation | 166W |
| Td(on) | 2us |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 26.9A |
| Collector-Emitter Breakdown Voltage (Vces) | 430V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 750mV@1mA |
| Gate Charge(Qg) | 24nC@5V |
| Vce Saturation(VCE(sat)) | 1.75V@15A,4.5V |
| Collector Cut-Off Current (Ices) | 25uA |
IGBT 430V 26.9A 166W Through Hole TO-220AB