onsemi FGP20N60UFDTU

onsemi · Thyristors & Power Discretes · MPN FGP20N60UFDTU

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Specifications

Pd - Power Dissipation165W
Td(off)87ns
Operating Temperature-55℃~+150℃
Td(on)13ns
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)40pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@250uA
Vce Saturation(VCE(sat))2.4V@20A,15V
Reverse Recovery Time(trr)35ns
Switching Energy(Eoff)260uJ

Technical details

IGBT FS (Field Stop) 600V 40A 165W Through Hole TO-220

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