onsemi · Thyristors & Power Discretes · MPN FGL60N100BNTDTU
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| Td(off) | 630ns |
|---|---|
| Pd - Power Dissipation | 180W |
| Td(on) | 140ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 1kV |
| Reverse Transfer Capacitance (Cres) | 200pF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@60mA |
| Vce Saturation(VCE(sat)) | 2.9V@60A,15V |
| Reverse Recovery Time(trr) | 1.2us |
| Turn-On Energy (Eon) | - |
IGBT 1kV 60A 180W Through Hole TO-264-3