onsemi · Thyristors & Power Discretes · MPN FGL40N120ANDTU
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| Td(off) | 110ns |
|---|---|
| Pd - Power Dissipation | 500W |
| Td(on) | 15ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 64A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 125pF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@250uA |
| Vce Saturation(VCE(sat)) | 3.2V@40A,15V |
| Reverse Recovery Time(trr) | 75ns |
| Switching Energy(Eoff) | 1.1mJ |
IGBT NPT (Non-Punch Through) 1.2kV 64A 500W Through Hole TO-264-3