onsemi · Thyristors & Power Discretes · MPN FGHL75T65MQDTL4
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| Pd - Power Dissipation | 375W |
|---|---|
| Td(off) | 181ns |
| Td(on) | 32ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 14pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@75mA |
| Vce Saturation(VCE(sat)) | 1.45V@75A,15V |
| Reverse Recovery Time(trr) | 107ns |
| Switching Energy(Eoff) | 1.1mJ |
IGBT FS (Field Stop) 650V 80A 375W Through Hole TO-247-4LD