onsemi FGHL75T65LQDT

onsemi · Thyristors & Power Discretes · MPN FGHL75T65LQDT

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Specifications

Td(off)568ns
Pd - Power Dissipation499W
Td(on)48ns
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)68pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3V@75mA
Vce Saturation(VCE(sat))1.35V@75A,15V
Reverse Recovery Time(trr)87ns
Switching Energy(Eoff)2.38mJ
Turn-On Energy (Eon)1.88mJ

Technical details

499W 80A 650V FS (Field Stop) TO-247-3L Single IGBTs RoHS

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