onsemi · Thyristors & Power Discretes · MPN FGHL60T120RWD
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| Pd - Power Dissipation | 833W |
|---|---|
| Td(off) | 290ns |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 48ns |
| Current - Collector(Ic) | 120A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 7.128nF@600V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.9V@60mA |
| Gate Charge(Qg) | 256nC |
| Vce Saturation(VCE(sat)) | 1.8V@60A,15V |
| Reverse Recovery Time(trr) | 183ns |
| Switching Energy(Eoff) | 1.8mJ |
IGBT 1.2kV 120A 833W Through Hole TO-247