onsemi · Thyristors & Power Discretes · MPN FGHL50T65MQDTL4
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| Pd - Power Dissipation | 268W |
|---|---|
| Td(off) | 336ns |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 50ns |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V |
| Vce Saturation(VCE(sat)) | 1.45V |
| Collector Cut-Off Current (Ices) | 250uA |
| Reverse Recovery Time(trr) | 79ns |
268W 50A 650V FS (Field Stop) TO-247-4 Single IGBTs RoHS