onsemi · Thyristors & Power Discretes · MPN FGHL40T65MQDT
No reviews yet — be the first to review onsemi FGHL40T65MQDT.
| Td(off) | 75ns |
|---|---|
| Pd - Power Dissipation | 238W |
| Td(on) | 18ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 9pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@40mA |
| Vce Saturation(VCE(sat)) | 1.8V@40A,15V |
| Reverse Recovery Time(trr) | 86ns |
| Switching Energy(Eoff) | 490uJ |
238W 60A 650V FS (Field Stop) TO-247-3LD Single IGBTs RoHS