onsemi · Thyristors & Power Discretes · MPN FGH80N60FD2TU
No reviews yet — be the first to review onsemi FGH80N60FD2TU.
| Td(off) | 126ns |
|---|---|
| Pd - Power Dissipation | 290W |
| Td(on) | 21ns |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 60pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V |
| Vce Saturation(VCE(sat)) | 1.8V |
| Collector Cut-Off Current (Ices) | 250uA |
| Reverse Recovery Time(trr) | 61ns |
290W 80A 600V FS (Field Stop) TO-247-3 Single IGBTs RoHS