onsemi · Thyristors & Power Discretes · MPN FGH75T65SQDT-F155
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| Td(off) | 114ns |
|---|---|
| Pd - Power Dissipation | 375W |
| Td(on) | 23ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 14pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.6V@75mA |
| Vce Saturation(VCE(sat)) | 2.1V@75A,15V |
| Reverse Recovery Time(trr) | 76ns |
| Switching Energy(Eoff) | 70uJ |
IGBT FS (Field Stop) 650V 150A 375W Through Hole TO-247-G03