onsemi FGH75T65SHDT-F155

onsemi · Thyristors & Power Discretes · MPN FGH75T65SHDT-F155

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Specifications

Pd - Power Dissipation455W
Td(off)86ns
Operating Temperature-55℃~+175℃
Td(on)28ns
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)43pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@75mA
Vce Saturation(VCE(sat))2.1V@75A,15V
Reverse Recovery Time(trr)76ns
Switching Energy(Eoff)750uJ

Technical details

455W 150A 650V FS (Field Stop) TO-247-3 Single IGBTs RoHS

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