onsemi · Thyristors & Power Discretes · MPN FGH60N60SMD
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| Td(off) | 104ns |
|---|---|
| Pd - Power Dissipation | 600W |
| Td(on) | 18ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 120A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 85pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@250uA |
| Vce Saturation(VCE(sat)) | 2.5V@60A,15V |
| Reverse Recovery Time(trr) | 39ns |
| Switching Energy(Eoff) | 450uJ |
IGBT FS (Field Stop) 600V 120A 600W Through Hole TO-247