onsemi · Thyristors & Power Discretes · MPN FGH50T65SQD-F155
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| Td(off) | 105ns |
|---|---|
| Pd - Power Dissipation | 268W |
| Td(on) | 22ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 12pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.6V@50mA |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V |
| Reverse Recovery Time(trr) | 31ns |
| Switching Energy(Eoff) | 45uJ |
IGBT FS (Field Stop) 650V 100A 268W Through Hole TO-247-G03