onsemi · Thyristors & Power Discretes · MPN FGH50N3
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| Td(off) | 135ns |
|---|---|
| Pd - Power Dissipation | 463W |
| Td(on) | 20ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 75A |
| Collector-Emitter Breakdown Voltage (Vces) | 300V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 180nC |
| Switching Energy(Eoff) | 92uJ |
| Turn-On Energy (Eon) | 130uJ |
463W 75A 300V TO-247-3 Single IGBTs RoHS