onsemi · Thyristors & Power Discretes · MPN FGH4L50T65SQD
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| Td(off) | 158.4ns |
|---|---|
| Pd - Power Dissipation | 268W |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 22.4ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 10pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.6V@50mA |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V |
| Reverse Recovery Time(trr) | 25ns |
| Switching Energy(Eoff) | 200uJ |
268W 80A 650V FS (Field Stop) TO-247-4LD Single IGBTs RoHS