onsemi · Thyristors & Power Discretes · MPN FGH40T65SQD-F155
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| Pd - Power Dissipation | 238W |
|---|---|
| Td(off) | 80ns |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 16.4ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 9pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.6V@40mA |
| Vce Saturation(VCE(sat)) | 2.1V@40A,15V |
| Reverse Recovery Time(trr) | 31.8ns |
| Switching Energy(Eoff) | 52uJ |
238W 80A 650V FS (Field Stop) TO-247-3LD Single IGBTs RoHS