onsemi · Thyristors & Power Discretes · MPN FGH40T120SMD-F155
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| Td(off) | 475ns |
|---|---|
| Pd - Power Dissipation | 555W |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Td(on) | 40ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 370nC |
| Reverse Recovery Time(trr) | 65ns |
| Switching Energy(Eoff) | 1.1mJ |
| Turn-On Energy (Eon) | 2.7mJ |
555W 80A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS