onsemi FGH40T100SMD-F155

onsemi · Thyristors & Power Discretes · MPN FGH40T100SMD-F155

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Specifications

Td(off)285ns
Pd - Power Dissipation333W
Td(on)29ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)1kV
Input Capacitance(Cies)-
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)398nC
Reverse Recovery Time(trr)78ns
Switching Energy(Eoff)1.15mJ

Technical details

333W 80A 1kV FS (Field Stop) TO-247-3 Single IGBTs RoHS

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