onsemi · Thyristors & Power Discretes · MPN FGH40N60SFDTU
No reviews yet — be the first to review onsemi FGH40N60SFDTU.
| Td(off) | 115ns |
|---|---|
| Pd - Power Dissipation | 290W |
| Td(on) | 25ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 60pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Vce Saturation(VCE(sat)) | 2.9V@40A,15V |
| Reverse Recovery Time(trr) | 45ns |
| Switching Energy(Eoff) | 310uJ |
IGBT FS (Field Stop) 600V 80A 290W Through Hole TO-247