onsemi · Thyristors & Power Discretes · MPN FGH40N120ANTU
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| Pd - Power Dissipation | 417W |
|---|---|
| Td(off) | 110ns |
| Td(on) | 15ns |
| Current - Collector(Ic) | 64A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@15V,40A |
| Gate Charge(Qg) | 220nC |
| Switching Energy(Eoff) | 1.1mJ |
| Turn-On Energy (Eon) | 2.3mJ |
417W 64A 1.2kV NPT (Non-Punch Through) TO-247-3 Single IGBTs RoHS