onsemi FGH30N120FTDTU

onsemi · Thyristors & Power Discretes · MPN FGH30N120FTDTU

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Specifications

Pd - Power Dissipation339W
Operating Temperature-
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)-
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)208nC
Reverse Recovery Time(trr)730ns
Turn-On Energy (Eon)-

Technical details

339W 60A 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS

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