onsemi · Thyristors & Power Discretes · MPN FGD3N60UNDF
No reviews yet — be the first to review onsemi FGD3N60UNDF.
| Td(off) | 22ns |
|---|---|
| Pd - Power Dissipation | 60W |
| Td(on) | 5.5ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 6A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.52V@15V,3A |
| Gate Charge(Qg) | 1.6nC |
| Reverse Recovery Time(trr) | 21ns |
| Switching Energy(Eoff) | 30uJ |
60W 6A 600V NPT (Non-Punch Through) TO-252 Single IGBTs RoHS