onsemi · Thyristors & Power Discretes · MPN FGD3N60LSDTM
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| Td(off) | 600ns |
|---|---|
| Pd - Power Dissipation | 40W |
| Td(on) | 40ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 6A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 12.5nC |
| Reverse Recovery Time(trr) | 234ns |
| Switching Energy(Eoff) | 1mJ |
40W 6A 600V TO-252AA Single IGBTs RoHS