onsemi · Thyristors & Power Discretes · MPN FGD3440G2-F085V
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| Pd - Power Dissipation | 166W |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 26.9A |
| Collector-Emitter Breakdown Voltage (Vces) | 400V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 24nC |
| Turn-On Energy (Eon) | - |
166W 26.9A 400V DPAK Single IGBTs RoHS