onsemi · Thyristors & Power Discretes · MPN FGD3245G2-F085C
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| Td(off) | 5.4us |
|---|---|
| Pd - Power Dissipation | 150W |
| Td(on) | - |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 23A |
| Collector-Emitter Breakdown Voltage (Vces) | 450V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.25V@4V,6A |
| Gate Charge(Qg) | 23nC |
| Turn-On Energy (Eon) | - |
150W 23A 450V DPAK(TO-252) Single IGBTs RoHS