onsemi · Thyristors & Power Discretes · MPN FGD3050G2V
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| Pd - Power Dissipation | 150W |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 32A |
| Collector-Emitter Breakdown Voltage (Vces) | 500V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 22nC |
| Turn-On Energy (Eon) | - |
150W 32A 500V DPAK Single IGBTs RoHS