onsemi · Thyristors & Power Discretes · MPN FGD3040G2-F085V
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| Td(off) | 4.8us |
|---|---|
| Pd - Power Dissipation | 150W |
| Td(on) | 900ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 41A |
| Collector-Emitter Breakdown Voltage (Vces) | 400V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.25V@4V,6A |
| Vce Saturation(VCE(sat)) | 1.15V |
| Gate Charge(Qg) | 21nC |
| Collector Cut-Off Current (Ices) | 25uA |
150W 41A 400V DPAK(TO-252) Single IGBTs RoHS