onsemi · Thyristors & Power Discretes · MPN FGB40T65SPD-F085
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| Td(off) | 35ns |
|---|---|
| Pd - Power Dissipation | 267W |
| Td(on) | 18ns |
| Operating Temperature | -55℃~+175℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 15pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@40mA |
| Vce Saturation(VCE(sat)) | 2.4V@40A,15V |
| Collector Cut-Off Current (Ices) | 250uA |
| Reverse Recovery Time(trr) | 206ns |
IGBT FS (Field Stop) 650V 267W Surface Mount D2PAK-3