onsemi · Thyristors & Power Discretes · MPN FGB3245G2-F085
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| Pd - Power Dissipation | 150W |
|---|---|
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 450V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Turn-On Energy (Eon) | - |
150W 450V TO-263AB Single IGBTs RoHS