onsemi · Thyristors & Power Discretes · MPN FGB30N6S2T
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| Td(off) | 40ns |
|---|---|
| Pd - Power Dissipation | 167W |
| Td(on) | 6ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 45A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 23nC |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | 55uJ |
167W 45A 600V D2PAK(TO-263) Single IGBTs RoHS